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| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. A1 KRA730E~KRA734E EPITAXIAL PLANAR PNP TRANSISTOR B B1 Simplify Circuit Design. A C 1 6 5 2 3 4 EQUIVALENT CIRCUIT C B R1 EQUIVALENT CIRCUIT (TOP VIEW) H P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 C 6 5 4 Q1 Q2 E 1. 2. 3. 4. 5. 6. Q1 Q2 Q2 Q2 Q1 Q1 EMITTER EMITTER BASE COLLECTOR BASE COLLECTOR 1 2 3 TES6 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage TemperatureRange * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA730E KRA731E Input Resistor KRA732E KRA733E KRA734E Note : * Characteristic of transistor only. ) SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 R1 TYP. -0.1 250 4.7 10 100 22 47 MAX. -100 -100 -0.3 k V MHz UNIT nA nA Marking 6 5 4 MARK SPEC TYPE MARK KRA730E JK KRA731E JM KRA732E JN KRA733E JO KRA734E JP 1 2 3 2002. 7. 9 Revision No : 2 J Type Name D 1/4 KRA730E~KRA734E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC KRA730E KRA731E Rise Time KRA732E KRA733E KRA734E KRA730E KRA731E Switching Time Storage Time KRA732E KRA733E KRA734E KRA730E KRA731E Fall Time KRA732E KRA733E KRA734E tf tstg VO=-5V VIN=-5V RL=1k tr SYMBOL TEST CONDITION MIN. TYP. 0.2 0.065 0.4 0.1 0.15 2.0 1.7 3.0 2.0 1.5 0.3 0.3 1.7 0.8 1.5 MAX. S UNIT 2002. 7. 9 Revision No : 2 2/4 KRA730E~KRA734E h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA730E KRA730E I C /IB =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA731E h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA731E I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA732E h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA732E IC /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 7. 9 Revision No : 2 3/4 KRA730E~KRA734E COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA733E h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA733E I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 KRA734E h FE - I C -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 KRA734E I C /I B =20 VCE(sat) - I C Ta=100 C Ta=25 C Ta=-25 C Ta=100 C Ta=25 C Ta=-25 C 10 -0.1 VCE =-5V -0.3 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 7. 9 Revision No : 2 4/4 |
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